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STPS10L60CG-TR PDF预览

STPS10L60CG-TR

更新时间: 2024-01-10 17:40:49
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意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
5页 79K
描述
Power Schottky Rectifier

STPS10L60CG-TR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SFM包装说明:R-PSFM-T2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.74应用:POWER
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.56 VJESD-30 代码:R-PSFM-T2
JESD-609代码:e3最大非重复峰值正向电流:220 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:60 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STPS10L60CG-TR 数据手册

 浏览型号STPS10L60CG-TR的Datasheet PDF文件第2页浏览型号STPS10L60CG-TR的Datasheet PDF文件第3页浏览型号STPS10L60CG-TR的Datasheet PDF文件第4页浏览型号STPS10L60CG-TR的Datasheet PDF文件第5页 
®
STPS10L60CF/CFP  
POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
A1  
IF(AV)  
VRRM  
2 x 5 A  
60 V  
K
A2  
Tj (max)  
VF (max)  
150 °C  
0.52 V  
FEATURES AND BENEFITS  
LOW FORWARD VOLTAGE DROP  
NEGLIGIBLE SWITCHING LOSSES  
INSULATED PACKAGE:  
Insulating voltage = 2000V DC  
Capacitance = 12pF  
A2  
A2  
K
A1  
K
A1  
TO-220FPAB  
ISOWATT220AB  
STPS10L60CF  
STPS10L60CFP  
AVALANCHE CAPABILITY SPECIFIED  
DESCRIPTION  
Dual center tap Schottky rectifiers suited for  
Switched Mode Power Supplies and high  
frequency DC to DC converters.  
Packaged in ISOWATT220AB, TO-220FPAB this  
device is intended for use in high frequency  
inverters.  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
VRRM  
60  
V
A
A
IF(RMS)  
IF(AV)  
30  
RMS forward current  
5
10  
Average  
forward current  
ISOWATT220AB Tc =130°C  
TO220FPAB δ = 0.5  
Per diode  
Per device  
IFSM  
IRRM  
PARM  
Tstg  
180  
1
A
A
Surge non repetitive forward current  
Repetitive peak reverse current  
Repetitive peak avalanche power  
Storage temperature range  
tp = 10 ms Sinusoidal  
tp = 2 µs square F = 1kHz  
tp = 1µs Tj = 25°C  
4000  
W
- 65 to + 175  
150  
°C  
°C  
V/µs  
Tj  
Maximum operating junction temperature *  
Critical rate of rise reverse voltage  
dV/dt  
10000  
dPtot  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
dTj  
Rth(j a)  
July 2003 - Ed: 3C  
1/5  

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