STPS10L60

更新时间： 2024-11-25 22:07:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
5页	79K
描述
POWER SCHOTTKY RECTIFIER

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中文翻译

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数据手册

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STPS10L60 数据手册

STPS10L60CF/CFP

POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 x 5 A

60 V

Tj (max)

V_F(max)

150 °C

0.52 V

FEATURES AND BENEFITS

■

LOW FORWARD VOLTAGE DROP

NEGLIGIBLE SWITCHING LOSSES

INSULATED PACKAGE:

Insulating voltage = 2000V DC

Capacitance = 12pF

TO-220FPAB

ISOWATT220AB

STPS10L60CF

STPS10L60CFP

■

AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Dual center tap Schottky rectifiers suited for

Switched Mode Power Supplies and high

frequency DC to DC converters.

Packaged in ISOWATT220AB, TO-220FPAB this

device is intended for use in high frequency

inverters.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

Repetitive peak reverse voltage

Value

Unit

V_RRM

I_F(RMS)

I_F(AV)

RMS forward current

Average

forward current

ISOWATT220AB Tc =130°C

TO220FPAB δ = 0.5

Per diode

Per device

I_FSM

I_RRM

P_ARM

T_stg

180

Surge non repetitive forward current

Repetitive peak reverse current

Repetitive peak avalanche power

Storage temperature range

tp = 10 ms Sinusoidal

tp = 2 µs square F = 1kHz

tp = 1µs Tj = 25°C

4000

- 65 to + 175

150

°C

V/µs

Maximum operating junction temperature *

Critical rate of rise reverse voltage

dV/dt

10000

dPtot

* :

thermal runaway condition for a diode on its own heatsink

dTj

Rth(j − a)

July 2003 - Ed: 3C

1/5

12 3 4 5

中文翻译

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