Datasheet > STPR506D

STPR506D

更新时间： 2024-11-05 06:14:51

品牌	Logo	应用领域
SIRECT		二极管功效局域网超快速恢复二极管
页数	文件大小	规格书
2页	74K
描述
Ultra Fast Recovery Diodes

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中文翻译

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STPR506D 数据手册

STPR506D

Ultra Fast Recovery Diodes

Dimensions TO-220AC

Dim.

Inches

Min. Max.

Milimeter

Min. Max.

12.70 14.73

14.23 16.51

9.66 10.66

0.500 0.580

0.560 0.650

0.380 0.420

0.139 0.161

2.300 0.420

0.100 0.135

0.045 0.070

C(TAB)

3.54

5.85

2.54

1.15

0.64

4.83

3.56

0.38

2.04

0.64

4.08

6.85

3.42

1.77

6.35

0.89

5.33

4.82

0.56

2.49

1.39

A=Anode, C=Cathode, TAB=Cathode

0.250

0.025 0.035

0.190 0.210

0.140 0.190

0.015 0.022

0.080 0.115

0.025 0.055

VRRM

VRMS

VDC

STPR506D

Symbol

600

420

600

Characteristics

Maximum Ratings

Unit

I(AV)

IFSM

Maximum Average Forward Rectified Current @TC=100^oC

5.0

Peak Forward Surge Current 8.3ms Single Half-Sine-Wave

Superimposed On Rated Load (JEDEC METHOD)

100

Maximum Forward Voltage At 5.0A DC

1.75

Maximum DC Reverse Current

At Rated DC Blocking Voltage

@TJ=25^oC

500

@TJ=125^oC

Typical Junction Capacitance (Note 1)

Maximum Reverse Recovery Time (Note 2)

Typical Thermal Resistance (Note 3)

^oC/W

^oC

TRR

ROJC

3.0

TJ,TSTG Operating And Storage Temperature Range

-55 to +150

NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.

2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.

3. Thermal Resistance Junction To Case.

FEATURES

MECHANICAL DATA

* Glass passivated chip

* Case: TO-220AC molded plastic

* Polarity: As marked on the body

* Weight: 0.08 ounces, 2.24 grams

* Mounting position: Any

* Superfast switching time for high efficiency

* Low forward voltage drop and high current capability

* Low reverse leakage current

* High surge capacity

中文翻译

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