Datasheet > STPR502D

STPR502D

更新时间： 2024-11-25 06:14:51

品牌	Logo	应用领域
SIRECT		二极管功效局域网超快速恢复二极管
页数	文件大小	规格书
2页	75K
描述
Ultra Fast Recovery Diodes

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中文翻译

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STPR502D 数据手册

STPR502D

Ultra Fast Recovery Diodes

Dimensions TO-220AC

Dim.

Inches

Min. Max.

Milimeter

Min. Max.

12.70 14.73

14.23 16.51

9.66 10.66

0.500 0.580

0.560 0.650

0.380 0.420

0.139 0.161

2.300 0.420

0.100 0.135

0.045 0.070

C(TAB)

3.54

5.85

2.54

1.15

0.64

4.83

3.56

0.38

2.04

0.64

4.08

6.85

3.42

1.77

6.35

0.89

5.33

4.82

0.56

2.49

1.39

A=Anode, C=Cathode, TAB=Cathode

0.250

0.025 0.035

0.190 0.210

0.140 0.190

0.015 0.022

0.080 0.115

0.025 0.055

VRRM

VRMS

VDC

STPR502D

Symbol

200

140

200

Characteristics

Maximum Ratings

Unit

I(AV)

IFSM

Maximum Average Forward Rectified Current @TC=100^oC

5.0

Non Repetitive Peak Forward Surge Current

TP=8.3ms

100

Per Diode Sinusoidal (JEDEC METHOD)

Maximum Forward Voltage At 5.0A DC

0.90

Maximum DC Reverse Current

At Rated DC Blocking Voltage

@TJ=25^oC

500

@TJ=125^oC

Typical Junction Capacitance (Note 1)

Maximum Reverse Recovery Time (Note 2)

Typical Thermal Resistance (Note 3)

^oC/W

^oC

TRR

ROJC

4.0

TJ,TSTG Operating And Storage Temperature Range

-55 to +150

NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.

2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.

3. Thermal Resistance Junction To Case.

FEATURES

MECHANICAL DATA

* Glass passivated chip

* Case: TO-220AC molded plastic

* Polarity: As marked on the body

* Weight: 0.08 ounces, 2.24 grams

* Mounting position: Any

* Superfast switching time for high efficiency

* Low forward voltage drop and high current capability

* Low reverse leakage current

* High surge capacity

中文翻译

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