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STPR1510D PDF预览

STPR1510D

更新时间: 2024-11-25 06:14:51
品牌 Logo 应用领域
SIRECT 二极管功效局域网超快速恢复二极管
页数 文件大小 规格书
2页 76K
描述
Ultra Fast Recovery Diodes

STPR1510D 数据手册

 浏览型号STPR1510D的Datasheet PDF文件第2页 
STPR1505D thru STPR1520D  
Ultra Fast Recovery Diodes  
Dimensions TO-220AC  
Dim.  
Inches  
Min. Max.  
Milimeter  
Min. Max.  
A
C
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
0.500 0.580  
0.560 0.650  
0.380 0.420  
0.139 0.161  
2.300 0.420  
0.100 0.135  
0.045 0.070  
12.70 14.73  
14.23 16.51  
9.66 10.66  
A
C
C(TAB)  
3.54  
5.85  
2.54  
1.15  
-
4.08  
6.85  
3.42  
1.77  
6.35  
0.89  
5.33  
4.82  
0.56  
2.49  
1.39  
A=Anode, C=Cathode, TAB=Cathode  
VRRM  
V
VRMS  
V
VDC  
V
-
0.250  
0.025 0.035  
0.190 0.210  
0.140 0.190  
0.015 0.022  
0.080 0.115  
0.025 0.055  
0.64  
4.83  
3.56  
0.38  
2.04  
0.64  
STPR1505D  
STPR1510D  
STPR1515D  
STPR1520D  
50  
35  
50  
100  
150  
200  
70  
100  
150  
200  
105  
140  
Symbol  
Characteristics  
Maximum Ratings  
Unit  
I(AV)  
Maximum Average Forward Rectified Current @TC=115oC  
15  
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave  
Superimposed On Rated Load (JEDEC METHOD)  
IFSM  
150  
Maximum Forward Voltage  
IF=15A (Note 1)  
@TJ=25oC  
1.25  
1.20  
VF  
IR  
V
@TJ=125oC  
Maximum DC Reverse Current  
At Peak Reverse Voltage (Note 1)  
@TJ=25oC  
50  
1000  
uA  
@TJ=100oC  
CJ  
Typical Junction Capacitance  
VR=4V, f=1MHz  
160  
30  
pF  
ns  
oC/W  
oC  
TRR  
Maximum Reverse Recovery Time (Note 2)  
Typical Thermal Resistance (Note 3)  
ROJC  
2.0  
TJ,TSTG Operating And Storage Temperature Range  
-55 to +150  
NOTES: 1. Pulse Test: Pulse Width=300us, Duty Cycle.  
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.  
3. Thermal Resistance Junction To Case.  
FEATURES  
MECHANICAL DATA  
* Glass passivated chip  
* Case: TO-220AC molded plastic  
* Polarity: As marked on the body  
* Weight: 0.08 ounces, 2.24 grams  
* Mounting position: Any  
* Superfast switching time for high efficiency  
* Low forward voltage drop and high current capability  
* Low reverse leakage current  
* High surge capacity  

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