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STP5NB100FP PDF预览

STP5NB100FP

更新时间: 2024-01-14 05:55:26
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
9页 109K
描述
N - CHANNEL 1000V - 2.4ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET

STP5NB100FP 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-220FP包装说明:TO-220FP, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.61
Is Samacsys:N雪崩能效等级(Eas):220 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:1000 V最大漏极电流 (Abs) (ID):5 A
最大漏极电流 (ID):5 A最大漏源导通电阻:2.7 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):40 W最大脉冲漏极电流 (IDM):15.2 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP5NB100FP 数据手册

 浏览型号STP5NB100FP的Datasheet PDF文件第2页浏览型号STP5NB100FP的Datasheet PDF文件第3页浏览型号STP5NB100FP的Datasheet PDF文件第4页浏览型号STP5NB100FP的Datasheet PDF文件第5页浏览型号STP5NB100FP的Datasheet PDF文件第6页浏览型号STP5NB100FP的Datasheet PDF文件第7页 
STP5NB100  
STP5NB100FP  
N - CHANNEL 1000V - 2.4- 5A - TO-220/TO-220FP  
PowerMESH MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STP5NB100  
STP5NB100FP  
1000 V  
1000 V  
< 2.7 Ω  
< 2.7 Ω  
5 A  
5 A  
ν
ν
ν
ν
ν
TYPICAL RDS(on) = 2.4 Ω  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
VERY LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
3
3
2
2
1
1
DESCRIPTION  
Using the latest high voltage MESH OVERLAY  
process, STMicroelectronics has designed an  
advanced family of power MOSFETs with  
outstanding performances. The new patent  
pending strip layout coupled with the Company’s  
proprietary edge termination structure, gives the  
lowest RDS(on) per area, exceptional avalanche  
and dv/dt capabilities and unrivalled gate charge  
and switching characteristics.  
TO-220  
TO-220FP  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
ν
ν
ν
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP5NB100 STP5NB100FP  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
1000  
1000  
± 30  
V
V
V
A
A
A
W
W/oC  
V/ns  
V
5
5(*)  
3.1(*)  
15.2  
40  
ID  
3.1  
IDM()  
Ptot  
15.2  
135  
1.08  
4.5  
o
Total Dissipation at Tc = 25 C  
Derating Factor  
0.32  
4.5  
dv/dt(1) Peak Diode Recovery voltage slope  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
2000  
-65 to 150  
150  
oC  
oC  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
(1) ISD 5 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX  
(*) Limited only by maximum temperature allowed  
1/9  
February 2000  

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