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STP5NA90

更新时间: 2024-02-13 11:14:55
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STP5NA90 数据手册

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STP5NB90  
STP5NB90FP  
N - CHANNEL 900V - 2.3  
- 5A - TO-220/TO-220FP  
PowerMESH  
MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STP5NB90  
STP5NB90FP  
900 V  
900 V  
< 2.5 Ω  
< 2.5  
5 A  
5 A  
TYPICAL RDS(on) = 2.3  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
VERY LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
3
3
2
2
1
DESCRIPTION  
1
Using the latest high voltage MESH OVERLAY  
process, STMicroelectronics has designed an  
advanced family of power MOSFETs with  
outstanding performances. The new patent  
pending strip layout coupled with the Company’s  
proprietary edge termination structure, gives the  
lowest RDS(on) per area, exceptional avalanche  
and dv/dt capabilities and unrivalled gate charge  
and switching characteristics.  
TO-220  
TO-220FP  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
UNINTERRUPTIBLE POWER SUPPLY(UPS)  
DC-DC & DC-AC CONVERTERS FOR  
TELECOM, INDUSTRIAL AND CONSUMER  
ENVIRONMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
STP5NB90FP  
Unit  
STP5NB90  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
900  
900  
V
V
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
30  
V
±
5
5(*)  
3.1(*)  
20  
A
ID  
3.1  
20  
A
IDM ( )  
A
Ptot  
Total Dissipation at Tc = 25 oC  
125  
1.0  
4.5  
40  
W
Derating Factor  
0.32  
4.5  
W/oC  
V/ns  
V
oC  
oC  
dv/dt( ) Peak Diode Recovery voltage slope  
1
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
2000  
-65 to 150  
150  
Max. Operating Junction Temperature  
5  
Α, µ ≤ ≤  
di/dt 200 A/ s, VDD V(BR)DSS, Tj TJMAX  
( ) Pulse width limited by safe operating area  
( 1) ISD  
(*) Limited only by maximum temperature allowed  
1/6  
September 1998  

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