Datasheet > STP13N60DM2

STP13N60DM2

更新时间： 2023-12-20 18:46:36

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	451K
描述
N沟道600 V、0.310 Ohm典型值、11 A MDmesh DM2功率MOSFET，TO-220封装

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STP13N60DM2 数据手册

STP13N60DM2

Datasheet

N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2

Power MOSFET in a TO-220 package

Features

max.

Order code

DS(on )

TAB

STP13N60DM2

600 V

0.365 Ω

11 A

•

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

TO-220

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

D(2, TAB)

Applications

G(1)

•

Switching applications

Description

S(3)

AM01475V1

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-

recovery diode series. It offers very low recovery charge (Q_rr) and time (t_rr) combined

with low R_DS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

Product status

STP13N60DM2

Product summary

Order code

Marking

STP13N60DM2

13N60DM2

TO-220

Package

Packing

Tube

DS12837 - Rev 1 - November 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...13

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