Datasheet > STO65N60DM6

STO65N60DM6

更新时间： 2023-12-20 18:44:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	1556K
描述
N沟道600 V、0.084 Ohm典型值、30 A MDmesh DM6功率MOSFET，TO-LL封装

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STO65N60DM6 数据手册

STO65N60DM6

Datasheet

N‑channel 600 V, 67 mΩ typ., 46 A MDmesh DM6

Power MOSFET in a TO‑LL package

Features

max.

Order code

STO65N60DM6

DS(on)

600 V

76 mΩ

46 A

•

Fast-recovery body diode

Lower R_DS(on)per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

TO-LL

type A2

Extremely high dv/dt ruggedness

Zener-protected

Drain (TAB)

Excellent switching performance thanks to the extra driving source pin

Gate(1)

Applications

•

Switching applications

Driver

source (2)

Power

source (3, 4, 5, 6, 7,8)

Description

N-chG1DS2PS345678DTABZ

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation,

DM6 combines very low recovery charge (Q_rr), recovery time (t_rr) and excellent

improvement in R_DS(on)per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Maturity status link

STO65N60DM6

Device summary

Order code

STO65N60DM6

65N60DM6

Marking

Package

Packing

TO-LL type A2

Tape and reel

DS13572 - Rev 1 - March 2021

For further information contact your local STMicroelectronics sales office.

www.st.com/Power Transistors

12 3 4 5 6 7...15

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