Datasheet > STO52N60DM6

STO52N60DM6

更新时间： 2023-12-20 18:45:50

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	1552K
描述
N-channel 600 V, 68 mOhm typ., 45 A MDmesh DM6 Power MOSFET in a TO-LL package

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STO52N60DM6 数据手册

STO52N60DM6

Datasheet

N‑channel 600 V, 68 mΩ typ., 45 A, MDmesh DM6

Power MOSFET in a TO‑LL package

Features

max.

Order code

STO52N60DM6

DS(on)

600 V

78 mΩ

45 A

•

Fast-recovery body diode

Lower R_DS(on)per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

TO-LL

type A2

Extremely high dv/dt ruggedness

Zener-protected

Drain (TAB)

High-creepage package

Excellent switching performance thanks to the extra driving source pin

Gate(1)

Applications

Driver

source (2)

Power

source (3, 4, 5, 6, 7,8)

•

Switching applications

N-chG1DS2PS345678DTABZ

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation,

DM6 combines very low recovery charge (Q_rr), recovery time (t_rr) and excellent

improvement in R_DS(on)per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status link

STO52N60DM6

Product summary

Order code

STO52N60DM6

52N60DM6

Marking

Package

Packing

TO-LL type A2

Tape and reel

DS12974 - Rev 2 - March 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

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