Datasheet > STO33N60M6

STO33N60M6

更新时间： 2023-12-20 18:45:38

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	1554K
描述
N沟道600 V、105 mOhm典型值、25 A MDmesh M6功率MOSFET，TO-LL封装

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STO33N60M6 数据手册

STO33N60M6

Datasheet

N-channel 600 V, 105 mΩ typ., 25 A, MDmesh M6 Power MOSFET

in a TO‑LL package

Features

DS(on)

max.

Order code

STO33N60M6

600 V

125 mΩ

25 A

•

Reduced switching losses

Lower R_DS(on)per area vs previous generation

Low gate input resistance

100% avalanche tested

TO-LL type A

Zener-protected

Drain (TAB)

Excellent switching performance thanks to the extra driving source pin

Applications

Gate(1)

•

Switching applications

LLC converters

Driver

source (2)

Power

source (3, 4, 5, 6, 7,8)

Boost PFC converters

N-chG1DS2PS345678DTABZ

Description

The new MDmesh M6 technology incorporates the most recent advancements to the

well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics

builds on the previous generation of MDmesh devices through its new M6

technology, which combines excellent R_DS(on)per area improvement with one of the

most effective switching behaviors available, as well as a user-friendly experience for

maximum end-application efficiency.

Product status link

STO33N60M6

Product summary

Order code

STO33N60M6

33N60M6

Marking

Package

Packing

TO-LL type A

Tape and reel

DS12688 - Rev 2 - May 2021

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...15

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