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STN9926 PDF预览

STN9926

更新时间: 2024-09-23 12:22:55
品牌 Logo 应用领域
司坦森 - STANSON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
7页 648K
描述
The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

STN9926 数据手册

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STN9926  
Dual N Channel Enhancement Mode MOSFET  
5A  
DESCRIPTION  
The STN9926 is the Dual N-Channel logic enhancement mode power field effect  
transistors are produced using high cell density , DMOS trench technology.  
This high density process is especially tailored to minimize on-state resistance.  
These devices are particularly suited for low voltage application , notebook computer  
power management and other battery powered circuits where high-side switching .  
FEATURE  
PIN CONFIGURATION  
SOP-8  
20V/5.0A, RDS(ON) = 50mΩ  
@VGS = 4.5V  
20V/4.0A, RDS(ON) = 65mΩ  
@VGS = 2.5V  
20V/2.8A, RDS(ON) = 90mΩ  
@VGS = 1.8V  
Super high density cell design for  
extremely low RDS(ON)  
Exceptional on-resistance and  
maximum DC current capability  
SOP-8 package design  
PART MARKING  
SOP-8  
ORDERING INFORMATION  
Part Number  
Package  
SOP-8  
Part Marking  
STN9926  
STN9926S8RG  
STN9926S8TG  
SOP-8  
STN9926  
Process Code : A ~ Z ; a ~ z  
STN9926S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free  
STN9926S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free  
1
120 Bentley Square, Mountain View, Ca 94040 USA  
www.syonsontech.com  
Copyright © 2007, Stanson Corp.  
STN9926 2007. V1  

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