Datasheet > STN8882D

STN8882D

更新时间： 2024-09-24 17:15:39

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STN8882D 数据手册

STN8882D

N Channel Enhancement Mode MOSFET

80.0A

DESCRIPTION

STN8882D is the N-Channel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. The STN8882D

has been designed specially to improve the overall efficiency of DC/DC converters

using either synchronous or conventional switching PWM controllers. It has been

optimized for low gate charge, low R

and fast switching speed.

DS(ON)

PIN CONFIGURATION (D-PAK)

TO-252

FEATURE

30V/ 35A, R_DS(ON)= 3.6mΩ（Typ.）

@VGS = 10V

30V/32A, R_DS(ON)= 5.5mΩ

@VGS = 4.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and

maximum DC current capability

TO-252 package design

PART MARKING

：

Year Code

Date Code

Wafer Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN8882D 2009.

12 3 4 5 6

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