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STN7400

更新时间： 2024-09-14 17:15:35

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STN7400 数据手册

ST7400

N Channel Enhancement Mode MOSFET

2.8A

DESCRIPTION

ST7400 is the NꢀChannel logic enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize onꢀstate resistance. These devices are

particularly suited for low voltage application such as cellular phone and notebook

computer power management, other battery powered circuits, and low inꢀline power

loss are required. The product is in a very small outline surface mount package.

FEATURE

PIN CONFIGURATION

SOT-323 (SC-70)

ꢀ

30V/2.8A, R_DS(ON)= 77mꢁ

@V^GS=10V

30V/2.5A, R_DS(ON)= 85mꢁ

@VGS = 4.5V

30V/1.5A, R_DS(ON)= 170mꢁ

@V^GS= 2.5V

Super high density cell design for

Extremely low R_DS(ON)

Exceptional onꢀresistance and

maximum DC current capability

SOTꢀ323 (SCꢀ70) package design

1.Gate 2.Source 3.Drain

PART MARKING

SOT-323

00YW

Y: Year Code A: Process Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

ST7400 2005. V1

12 3 4 5 6 7 8

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