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STN2222 PDF预览

STN2222

更新时间: 2024-11-16 08:59:19
品牌 Logo 应用领域
可天士 - KODENSHI 晶体小信号双极晶体管
页数 文件大小 规格书
4页 207K
描述
NPN Silicon Transistor

STN2222 数据手册

 浏览型号STN2222的Datasheet PDF文件第2页浏览型号STN2222的Datasheet PDF文件第3页浏览型号STN2222的Datasheet PDF文件第4页 
STN2222  
NPN Silicon Transistor  
Descriptions  
General purpose application  
Switching application  
PIN Connection  
C
E
Features  
Large collector current  
Low collector saturation voltage  
Complementary pair with STN2907  
B
TO-92  
Ordering Information  
Type NO.  
Marking  
Package Code  
STN2222  
STN2222  
TO-92  
Absolute maximum ratings  
Characteristic  
Ta=25°C  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
60  
Unit  
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-base voltage  
V
30  
V
5
V
Collector current  
600  
mA  
mW  
°C  
Collector dissipation  
PC  
625  
Junction temperature  
Storage temperature range  
Tj  
150  
Tstg  
-55~150  
°C  
Electrical Characteristics  
Characteristic  
Ta=25°C  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Test Condition  
IC=10μA, IE=0  
Min. Typ. Max. Unit  
Collector-Base breakdown voltage  
Collector-Emitter breakdown voltage  
Emitter-Base breakdown voltage  
Collector cut-off current  
60  
30  
5
-
-
V
IC=10mA, IB=0  
-
-
V
IE=10μA, IC=0  
-
-
V
VCB=60V, IE=0  
-
-
10  
-
nA  
-
DC current gain  
hFE  
VCE=10V, IC=10mA  
IC=150mA, IB=15mA  
VCE=20V, IC=20mA  
VCB=10V, IE=0, f=1MHz  
75  
-
-
Collector-Emitter saturation voltage  
Transistor frequency  
VCE(sat)  
fT  
-
0.4  
-
V
250  
-
-
MHz  
pF  
Collector output capacitance  
Cob  
6.0  
-
KSD-T0A045-000  
1

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