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STN2018

更新时间： 2024-10-03 17:15:39

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STN2018 数据手册

STN2018

N Channel Enhancement Mode MOSFET

10.0A

DESCRIPTION

STN2018 is the N-Channel logic enhancement mode power field effect transistors

which are produced using high cell density DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application, notbook computer

power management and other battery powered circuits where high-side switching.

PIN CONFIGURATION

FEATURE

SOP-8

20V/10A, R_DS(ON)= 10mΩ

@VGS = 4.5V

20V/7A, R_DS(ON)= 15mΩ

@VGS = 2.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and maximum

DC current capability

SOP-8 package design

PART MARKING

SOP-8

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN2018 2013. V1

12 3 4 5 6 7

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STN2222AS	AUK	获取价格	NPN Silicon Transistor
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