Datasheet > STN1A80

STN1A80

更新时间： 2024-10-02 08:59:19

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描述
Silicon Bidirectional Triode Thyristors

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STN1A80 数据手册

TIGER ELECTRONIC CO.,LTD

STN1A60/80

Silicon Bidirectional Triode Thyristors

GENERAL DESCRIPTION

Designed for use in solid state relays, MPU interface, TTL logic and

any other light industrial or consumer application. Supplied in an

inexpensive TO - 92 package which is readily adaptable for use in

automatic insertion equipment.

Typ

Parameter

Symbol

Unit

STN1A60 STN1A80

Repetitive peak off-state

voltages

V_DRM

V_RRM

600

800

RMS on-state current

I_T(RMS)

I_TSM

1.0

Non-repetitive peak

on-state current

Max. Operating Junction

Temperature

T_j

110

^oC

Storage Temperature

T_stg

-45~150

Typ

Parameter

Symbol

Test Conditions

Min

Max Unit

STN1A60 STN1A80

Repetitive peak off-state voltage

V_DRM

V_RRM

600

800

—

RMS on-state current

On-state voltage

Holding current

T2+G+

I_T(RMS)all conduction angles

1.0

—

1.60

V_T

I_H

I_T=1.5 A

—

0.5

V_D=12 V; I_GT=10 mA

5.0

Gate trigger

current

T2+G-

T2-G-

T2-G+

I_GT

V =6.0 V; R = 10

Gate trigger voltage

V_GT

V =6.0 V; R = 10

1.8

中文翻译

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