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STN18T20

更新时间： 2024-10-03 17:15:31

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STN18T20 数据手册

STN18T20

N Channel Enhancement Mode MOSFET

18.0A

DESCRIPTION

STN18T20 is the N-Channel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application such as power management and other

battery powered circuits where high-side switching.

FEATURE

PIN CONFIGURATION

TO-252

200V/12A, R_DS(ON)= 170mΩ(Typ.)

@VGS = 10V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and

maximum DC current capability

TO-252 package design

PART MARKING

Y: Year Code

A: Date Code

Q: Process Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN18T20 2012. V1

12 3 4

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