Datasheet > STN1304

STN1304

更新时间： 2024-10-31 17:15:35

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STN1304 数据手册

STN1304

N Channel Enhancement Mode MOSFET

2.0A

DESCRIPTION

STN1304 is the N-Channel logic enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology.This high density process

is especially tailored to minimize on-state resistance.These devices are particularly

suited for low voltage application such as cellular phone and notebook computer

power management, other battery powered circuits, and low in-line power loss are

required. The product is in a very small outline surface mount package.

FEATURE

PIN CONFIGURATION

SOT-323

20V/2.0A, R_DS(ON)= 225mΩ

@VGS = 4.5V

20V/1.5A, R_DS(ON)= 315mΩ

@VGS = 2.5V

20V/1.0A, R_DS(ON)= 425mΩ

@VGS = 4.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and maximum

DC current capability

SOT-323 package design

1.Gate 2.Source 3.Drain

PART MARKING

SOT-323

04YA

Y: Year Code A: Process Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN1304 2005. V1

12 3 4 5 6

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