SMBJ16A-TR

更新时间： 2024-01-27 15:24:21

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		瞬态抑制器二极管光电二极管 PC 局域网
页数	文件大小	规格书
6页	161K
描述
TRANSILTM

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技术参数
数据手册

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SMBJ16A-TR 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
JESD-609代码：	e3	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Matte Tin (Sn)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SMBJ16A-TR 数据手册

SMBJ5.0A-TR,CA-TR

SMBJ188A-TR,CA-TR

TRANSIL^TM

FEATURES

■

PEAK PULSE POWER : 600 W (10/1000µs)

■

STAND OFF VOLTAGE RANGE :

From 5V to 188V.

■

UNI AND BIDIRECTIONAL TYPES

LOW CLAMPING FACTOR

FAST RESPONSE TIME

JEDEC REGISTERED PACKAGE OUTLINE

DESCRIPTION

The SMBJ series are TRANSIL^TMdiodes designed

specifically for protecting sensitive equipment

against transient overvoltages.

SMB

Transil diodes provide high overvoltage protection

by clamping action. Their instantaneous response

to transient overvoltages makes them particu-

larly suited to protect voltage sensitive devices

such as MOS Technology and low voltage sup-

plied IC’s.

(JEDEC DO-214AA)

ABSOLUTE MAXIMUM RATINGS (T_amb= 25°C)

Symbol

P_PP

Parameter

Peak pulse power dissipation (see note 1)

Power dissipation on infinite heatsink

Value

600

Unit

Tj initial = T_amb

_amb= 50°C

I_FSM

Non repetitive surge peak forward

current for unidirectional types

tp = 10ms

Tj initial = T_amb

100

T_stg

T_j

Storage temperature range

Maximum junction temperature

- 65 to + 175

150

°C

T_L

Maximum lead temperature for soldering during 10 s.

260

°C

Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.

THERMAL RESISTANCES

Symbol

R_{th (j-l)}

Parameter

Value

Unit

°C/W

Junction to leads

R_{th (j-a)}

Junction to ambient on printed circuit on recommended pad

layout

100

October 2001- Ed: 4

1/6

12 3 4 5 6

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