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NAND01GW3B PDF预览

NAND01GW3B

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
64页 633K
描述
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

NAND01GW3B 数据手册

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NAND01G-B  
NAND02G-B  
1 Gbit, 2 Gbit,  
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory  
Feature summary  
High Density NAND Flash memories  
Up to 2 Gbit memory array  
Up to 64Mbit spare area  
Cost effective solutions for mass  
storage applications  
NAND interface  
x8 or x16 bus width  
TSOP48 12 x 20mm  
Multiplexed Address/ Data  
Pinout compatibility for all densities  
FBGA  
Supply voltage  
1.8V device: VDD = 1.7 to 1.95V  
3.0V device: VDD = 2.7 to 3.6V  
VFBGA63 9.5 x 12 x 1mm  
TFBGA63 9.5 x 12 x 1.2mm  
Page size  
x8 device: (2048 + 64 spare) Bytes  
x16 device: (1024 + 32 spare) Words  
Serial Number option  
Data protection  
Block size  
x8 device: (128K + 4K spare) Bytes  
x16 device: (64K + 2K spare) Words  
Hardware and Software Block Locking  
Hardware Program/Erase locked during  
Power transitions  
Page Read/Program  
Random access: 25µs (max)  
Sequential access: 50ns (min)  
Page program time: 300µs (typ)  
Data integrity  
100,000 Program/Erase cycles  
10 years Data Retention  
Copy Back Program mode  
ECOPACK® packages  
Fast page copy without external  
buffering  
Development tools  
Error Correction Code software and  
hardware models  
Cache Program and Cache Read modes  
Internal Cache Register to improve the  
program and read throughputs  
Bad Blocks Management and Wear  
Leveling algorithms  
Fast Block Erase  
File System OS Native reference  
software  
Block erase time: 2ms (typ)  
Status Register  
Electronic Signature  
Chip Enable ‘don’t care’  
Hardware simulation models  
for simple interface with microcontroller  
February 2006  
Rev 4.0  
1/64  
www.st.com  
2

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