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2N3771 PDF预览

2N3771

更新时间: 2024-02-15 05:25:30
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率双极晶体管局域网高功率电源
页数 文件大小 规格书
4页 67K
描述
HIGH POWER NPN SILICON TRANSISTOR

2N3771 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:FLANGE MOUNT, O-MBFM-P2Reach Compliance Code:unknown
风险等级:5.7最大集电极电流 (IC):15 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):5JEDEC-95代码:TO-3
JESD-30 代码:O-MBFM-P2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:200 °C最低工作温度:-65 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):150 W
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):0.2 MHz
VCEsat-Max:4 VBase Number Matches:1

2N3771 数据手册

 浏览型号2N3771的Datasheet PDF文件第2页浏览型号2N3771的Datasheet PDF文件第3页浏览型号2N3771的Datasheet PDF文件第4页 
2N3771  
2N3772  
HIGH POWER NPN SILICON TRANSISTOR  
SGS-THOMSON PREFERRED SALESTYPES  
DESCRIPTION  
The 2N3771, 2N3772 are silicon epitaxial-base  
NPN transistors mounted in Jedec Jedec TO-3  
metal case. They are intended for linear  
amplifiers and inductive switching applications.  
1
2
TO-3  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
2N3771  
40  
2N3772  
VCEO  
VCEV  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage (IE = 0)  
Collector-Emitter Voltage (VBE = -1.5V)  
Collector-Base Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
60  
80  
100  
7
V
V
50  
50  
V
5
V
30  
20  
30  
5
A
ICM  
IB  
Collector Peak Current  
30  
A
Base Current  
7.5  
15  
A
IBM  
Base Peak Current  
15  
A
o
Ptot  
Tstg  
Tj  
Total Dissipation at Tc 25 C  
150  
-65 to 200  
200  
W
oC  
oC  
Storage Temperature  
Max. Operating Junction Temperature  
1/4  
June 1997  

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