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2N3055HG PDF预览

2N3055HG

更新时间: 2024-01-01 09:59:50
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管局域网
页数 文件大小 规格书
7页 93K
描述
Transistor Silicon Power NPN, TO-204 (TO-3), 100-FTRAY

2N3055HG 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.59外壳连接:COLLECTOR
最大集电极电流 (IC):15 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):5
JEDEC-95代码:TO-3JESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:PIN/PEG端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):2.5 MHzBase Number Matches:1

2N3055HG 数据手册

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2N3055  
MJ2955  
Complementary power transistors  
Features  
Low collector-emitter saturation voltage  
Complementary NPN - PNP transistors  
Applications  
General purpose  
Audio Amplifier  
1
2
TO-3  
Description  
The devices are manufactured in epitaxial-base  
planar technology and are suitable for audio,  
power linear and switching applications.  
Figure 1. Internal schematic diagram  
Table 1.  
Device summary  
Order code  
Marking  
Package  
Packaging  
2N3055  
MJ2955  
2N3055  
MJ2955  
TO-3  
tray  
January 2008  
Rev 7  
1/7  
.
www.st.com  
7

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