5秒后页面跳转
2N2484UB PDF预览

2N2484UB

更新时间: 2024-01-07 05:16:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体半导体晶体管
页数 文件大小 规格书
19页 115K
描述
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

2N2484UB 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2N2484UB 数据手册

 浏览型号2N2484UB的Datasheet PDF文件第2页浏览型号2N2484UB的Datasheet PDF文件第3页浏览型号2N2484UB的Datasheet PDF文件第4页浏览型号2N2484UB的Datasheet PDF文件第5页浏览型号2N2484UB的Datasheet PDF文件第6页浏览型号2N2484UB的Datasheet PDF文件第7页 
The documentation and process  
conversion measures necessary to  
comply with this revision shall be  
completed by 31 November 2000.  
INCH-POUND  
MIL-PRF-19500/376E  
31 August 2000  
SUPERSEDING  
MIL-PRF-19500/376D  
21 August 1998  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER  
TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors.  
Four levels of product assurance is provided for each device type as specified in MIL-PRF-19500. Two levels of  
product assurance are provided for die.  
1.2 Physical dimensions. See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and  
UB), and figures 4 and 5 (die).  
1.3 Maximum ratings.  
Types  
PT  
VCBO  
VEBO  
VCEO  
IC  
TJ and TSTG  
RqJA  
RqJC  
TA = +25°C  
mW  
V dc  
V dc  
V dc  
mA dc  
°C  
°C/W  
°C/W  
2N2484  
2N2484UA  
2N2484UB  
500 (1)  
650 (2)  
500 (1)  
60  
60  
60  
6
6
6
60  
60  
60  
50  
50  
50  
-65 to +200  
-65 to +200  
-65 to +200  
325  
210  
325  
146  
160  
146  
(1) Derate linearly at 3.08 mW/°C above TA = +37.5°C  
(2) Derate linearly at 4.76 mW/°C above TA = +63.5°C.  
1.4 Primary electrical characteristics.  
hfe  
Cobo  
|hfe|2  
VCE(sat) (1)  
Limits  
VCE = 5 V dc  
IC = 1 mA dc  
f = 1 kHz  
IE = 0  
VCB = 5 V dc  
100 kHz £ f £ 1 MHz  
IC = 1.0 mA dc  
IB = 0.1 mA dc  
IC = 500 mA dc  
VCE = 5 V dc  
f = 30 MHz  
pF  
V dc  
0.3  
Min  
Max  
250  
900  
2.0  
7.0  
5.0  
(1) Pulsed (see 4.5.1).  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in  
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,  
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal  
(DD Form 1426) appearing at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  

与2N2484UB相关器件

型号 品牌 描述 获取价格 数据表
2N2484UBC MICROSEMI NPN SILICON LOW POWER TRANSISTOR

获取价格

2N249 ETC TRANSISTOR | BJT | PNP | 200MA I(C) | TO-9VAR

获取价格

2N2490 ETC TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 12A I(C) | TO-36

获取价格

2N2491 ETC TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-36

获取价格

2N2492 ETC TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 12A I(C) | TO-36

获取价格

2N2493 NJSEMI GE PNP OWER BJT

获取价格