SD1888-03
RF & MICROWAVE TRANSISTORS
1.6 GHz SATCOM APPLICATIONS
.
.
.
.
.
.
.
1.65 GHz
28 VOLTS
EFFICIENCY 50% MIN.
CLASS C OPERATION
COMMON BASE
INPUT/OUTPUT MATCHING
POUT 24 W MIN. WITH 9.0 dB GAIN
=
.250 x .320 2LFL (M170)
epoxy sealed
ORDER CODE
BRANDING
1888-3
SD1888-03
PIN CONNECTION
DESCRIPTION
The SD1888-03 is a 28 V Class C silicon NPN
transistor designed for INMARSAT and other 1.65
GHz SATCOM applications. Agold metallized emit-
ter-ballasted die geometry is employed providing
high gain and efficiency while ensuring long term
reliability and ruggedness under severe operating
conditions. SD1888-03 is packaged in a cost-ef-
fective epoxy sealed housing
1. Collector
2. Emitter
3. Base
°
= 25 C)
ABSOLUTE MAXIMUM RATINGS (T
case
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
45
Unit
Collector-Base Voltage
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
12
3.0
2.6
50
V
A
PDISS
TJ
Power Dissipation
W
°
Junction Temperature
Storage Temperature
+200
C
C
°
TSTG
65 to +150
−
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
3.5
°C/W
1/4
July 1993