SD1530-08
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.
DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
40 WATTS (typ.) IFF 1030 - 1090 MHz
35 WATTS (min.) DME 1025 - 1150 MHz
25 WATTS (typ.) TACAN 960 - 1215 MHz
9.0 dB MIN. GAIN
.
.
.
.
.
.
REFRACTORY GOLD METALLIZATION
.250 SQ. 2LFL (M105)
EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
hermetically sealed
ORDER CODE
BRANDING
1530-8
SD1530-08
.
INFINITE LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.
INPUT MATCHED, COMMON BASE
CONFIGURATION
PIN CONNECTION
DESCRIPTION
The SD1530-08 is a gold metallized silicon, NPN
power transistor designed for applications requiring
high peak power and low duty cycles such as
IFF, DME and TACAN. The SD1530-08 is pack-
aged in the .250” input matched hermetic stripline
flange package resulting in improved broadband
performance and a low thermal resistance.
1. Collector
2. Base
3. Emitter
°
= 25 C)
ABSOLUTE MAXIMUM RATINGS (T
case
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
65
Unit
Collector-Base Voltage
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
65
3.5
V
2.6
A
PDISS
TJ
Power Dissipation
87.5
+200
W
°
Junction Temperature
Storage Temperature
C
C
°
TSTG
65 to +150
−
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
2.0
°C/W
1/5
August 1993