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STMFS4935NT1G

更新时间： 2024-09-30 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管功率场效应晶体管
页数 文件大小 规格书
7页 135K
描述
单 N 沟道，功率 MOSFET，30V，93A，3.2mΩ

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STMFS4935NT1G 数据手册

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NTMFS4935N  
Power MOSFET  
30 V, 93 A, Single N−Channel, SO−8 FL  
Features  
• Low R  
to Minimize Conduction Losses  
• Low Capacitance to Minimize Driver Losses  
DS(on)  
• Optimized Gate Charge to Minimize Switching Losses  
http://onsemi.com  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
Applications  
3.2 mW @ 10 V  
4.2 mW @ 4.5 V  
• CPU Power Delivery, DC−DC Converters  
30 V  
93 A  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Symbol  
Value  
Unit  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
V
30  
20  
V
V
A
D (5,6)  
DSS  
V
GS  
Continuous Drain  
Current R  
T = 25°C  
I
D
21.8  
A
q
JA  
T = 100°C  
A
13.8  
2.63  
(Note 1)  
G (4)  
Power Dissipation  
T = 25°C  
A
P
W
A
D
R
q
JA  
(Note 1)  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
40  
25  
S (1,2,3)  
N−CHANNEL MOSFET  
≤
q
JA  
T = 100°C  
A
10 s (Note 1)  
Power Dissipation  
T = 25°C  
P
8.7  
W
A
A
D
R
≤ 10 s  
q
JA  
MARKING  
DIAGRAM  
Steady  
State  
(Note 1)  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
13  
8.2  
D
q
JA  
T = 100°C  
A
(Note 2)  
1
S
S
S
G
D
D
4935N  
AYWWG  
G
Power Dissipation  
T = 25°C  
P
0.93  
W
A
A
D
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 1  
R
(Note 2)  
q
JA  
Continuous Drain  
Current R  
T
T
T
= 25°C  
= 85°C  
= 25°C  
I
D
93  
59  
48  
C
C
C
D
q
JC  
(Note 1)  
A
Y
= Assembly Location  
= Year  
Power Dissipation  
P
D
W
A
R
q
JC  
(Note 1)  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
Pulsed Drain  
Current  
T = 25°C, t = 10 ms  
I
DM  
275  
100  
A
p
Current Limited by Package  
T = 25°C  
A
I
A
Dmax  
Operating Junction and Storage  
Temperature  
T ,  
STG  
−55 to  
+150  
°C  
J
T
ORDERING INFORMATION  
Source Current (Body Diode)  
Drain to Source DV/DT  
I
44  
6
A
S
†
Device  
Package  
Shipping  
dV/d  
V/ns  
mJ  
t
NTMFS4935NT1G  
SO−8 FL  
(Pb−Free)  
1500 /  
Single Pulse Drain−to−Source Avalanche  
Energy T = 25°C, V = 30 V, V = 10 V,  
E
AS  
126.1  
Tape & Reel  
J
DD  
GS  
I = 29 A , L = 0.3 mH, R = 25 W  
L
pk  
G
NTMFS4935NT3G  
SO−8 FL  
(Pb−Free)  
5000 /  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
Tape & Reel  
L
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
August, 2009 − Rev. 4  
NTMFS4935N/D  
 
1234567

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