STM8500

更新时间： 2024-09-16 04:30:19

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管场效应晶体管
页数	文件大小	规格书
11页	1089K
描述
Dual E nhancement Mode Field Effect Transistor (N and P Channel)

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数据手册

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STM8500 数据手册

S TM8500

S amHop Microelectronics C orp.

Arp,20 2005 ver1.2

Dual E nhancement Mode Field E ffect Transistor ( N and P C hannel)

(N-C hannel)

(P -C hannel)

PR ODUCT S UMMAR Y

VDS S

DS (ON) ( m

Ω

) Max

VDS S

DS (ON) ( m

Ω

) Max

50 @ VG S = 10V

110 @ VG S = -10V

145 @ VG S = -4.5V

-55V

-3A

4.5A

55V

75 @ VG S = 4.5V

D1 D1 D2 D2

S O-8

S 1 G 1 S 2 G 2

ABS OLUTE MAXIMUM R ATING S (T =25 C unless otherwise noted)

Unit

P arameter

S ymbol

Vspike^d

N-C hannel P -C hannel

4.5

Drain-S ource Voltage R ating

Drain-S ource Voltage

-60

-55

G S

G ate-S ource Voltage

25 C

-3

Drain C urrent-C ontinuous @ Ta

70 C

-2.5

3.8

-P ulsed ^b

-15

Drain-S ource Diode Forward C urrent ^a

1.7

-1.7

Ta= 25 C

Maximum P ower Dissipation ^a

Ta=70 C

1.44

Operating J unction and S torage

Temperature R ange

-55 to 150

TJ , TS TG

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, J unction-to-Ambient ^a

J A

62.5

12 3 4 5 6 7...11

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