Datasheet > STM8456

STM8456

更新时间： 2024-11-02 06:14:51

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管场效应晶体管
页数	文件大小	规格书
11页	257K
描述
Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

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STM8456 数据手册

STM8456

Ver 1.0

S mHop Microelectronics Corp.

Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

PRODUCT SUMMARY (N-Channel)

PRODUCT SUMMARY (P-Channel)

RDS(ON) (m

Ω

) Max

RDS(ON) (mΩ) Max

VDSS

33 @ VGS=10V

45 @ VGS=4.5V

45 @ VGS=-10V

70 @ VGS=-4.5V

6.2A

-5.3A

40V

-40V

S 2

S 1

S O-8

ABSOLUTE MAXIMUM RATINGS T_A=25 C unless otherwise noted

)

(

Symbol

V_DS

Parameter

N-Channel

P-Channel

Units

Drain-Source Voltage

Gate-Source Voltage

-40

V_GS

T_A=25 C

-5.3

6.2

I_D

Drain Current-Continuous

T_A=70 C

4.9

-4.2

-22

I_DM

-Pulsed

Single Pulse Avalanche Energy

Maximum Power Dissipation ^a

E_AS

T_A=25 C

P_D

T_A=70 C

1.28

Operating Junction and Storage

Temperature Range

°C

-55 to 150

T_J, T_STG

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

62.5

°C/W

Details are subject to change without notice.

May,29,2008

www.samhop.com.tw

12 3 4 5 6 7...11

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