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STM8401 PDF预览

STM8401

更新时间: 2024-11-24 21:55:19
品牌 Logo 应用领域
三合微科 - SAMHOP 晶体晶体管场效应晶体管
页数 文件大小 规格书
11页 959K
描述
Dual Enhancement Mode Field Effect Transistor(N and P Channel)

STM8401 数据手册

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S TM8401  
S amHop Microelectronics C orp.  
May.26, 2004 ver1.1  
Dual E nhancement Mode Field E ffect Transistor ( N and P C hannel)  
(N-C hannel)  
(P -C hannel)  
PR ODUCT S UMMAR Y  
PR ODUCT S UMMAR Y  
VDS S  
R
DS (ON) ( m  
) Max  
VDS S  
ID  
ID  
R
DS (ON) ( m  
) Max  
25 @ VG S = 10V  
55 @ VG S = -10V  
85 @ VG S = -4.5V  
-30V  
7A  
-4.5A  
30V  
40 @ VG S = 4.5V  
D1 D1 D2 D2  
8
7
6
5
S O-8  
1
1
2
3
4
S 1 G 1 S 2 G 2  
ABS OLUTE MAXIMUM R ATING S (T  
P arameter  
A
=25 C unless otherwise noted)  
Unit  
V
S ymbol  
N-C hannel P -C hannel  
Drain-S ource Voltage  
V
V
DS  
G S  
30  
20  
-30  
20  
V
G ate-S ource Voltage  
7
- 4.5  
-18  
I
D
Drain C urrent-C ontinuous a @ T  
-P ulsed b  
J
=125 C  
A
29  
A
I
DM  
Drain-S ource Diode Forward C urrent a  
Maximum P ower Dissipation a  
A
I
S
1.7  
-1.7  
P
D
W
C
2.0  
-55 to 150  
Operating J unction and S torage  
Temperature R ange  
TJ , TS TG  
THE R MAL C HAR AC TE R IS TIC S  
Thermal R esistance, J unction-to-Ambient a  
C
/W  
R
J A  
62.5  
1

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