Datasheet > STLD200N4F6AG

STLD200N4F6AG

更新时间： 2023-12-20 18:45:09

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意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	831K
描述
汽车级N沟道40 V、1.27 mOhm典型值、120 A STripFET F6功率MOSFET，PowerFLAT 5x6双侧冷却封装

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STLD200N4F6AG 数据手册

STLD200N4F6AG

Automotive-grade N-channel 40 V, 1.27 mΩ typ., 120 A

STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 DSC

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

STLD200N4F6AG

40 V

1.50 mΩ

120 A



AEC-Q101 qualified

Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss

Wettable flank package

Applications

Figure 1: Internal schematic diagram



Switching applications

D(5, 6, 7, 8)

Description

This device is an N-channel Power MOSFET

developed using the STripFET™ F6 technology

with a new trench gate structure. The resulting

Power MOSFET exhibits very low R_DS(on)in all

packages.

G(4)

S(1, 2, 3)

Table 1: Device summary

Package

Order code

Marking

Packaging

STLD200N4F6AG

200

PowerFLAT™ 5x6 dual side cooling

Tape and reel

July 2017

DocID028892 Rev 5

1/13

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...13

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