Datasheet > STL7N6LF3

STL7N6LF3

更新时间： 2024-11-28 14:58:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	963K
描述
汽车级N沟道60 V、35 mOhm典型值、6.5 A STripFET F3功率MOSFET，PowerFLAT 5x6封装

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STL7N6LF3 数据手册

STL7N6LF3

Automotive-grade N-channel 60 V, 35 mΩ typ., 6.5 A

STripFET™ F3 Power MOSFET in a PowerFLAT™ 5x6 package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

STL7N6LF3

60 V

43 mΩ

6.5 A



AEC-Q101 qualified

Logic level V_GS(th)

175 °C maximum junction temperature

100% avalanche rated

Wettable flank package

Applications



Switching applications

Figure 1: Internal schematic diagram

Description

This device is an N-channel Power MOSFET

developed using STripFET™ F3 technology. It is

designed to minimize on-resistance and gate

charge to provide superior switching

performance.

Table 1: Device summary

Package

PowerFLAT™ 5x6

Order code

Marking

Packing

STL7N6LF3

7N6LF3

Tape and reel

February 2017

DocID027038 Rev 4

1/15

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...15

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