Datasheet > STL13N60M2

STL13N60M2

更新时间： 2024-11-28 14:58:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	1047K
描述
N沟道600 V、0.39 Ohm典型值、7 A MDmesh M2功率MOSFET，PowerFLAT 5x6 HV封装

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STL13N60M2 数据手册

STL13N60M2

N-channel 600 V, 0.39 Ω typ., 7 A MDmesh II Plus™ low Q_g

Power MOSFET in a PowerFLAT™ 5x6 HV package

Datasheet

−

production data

Features

Order code

V_DS@ T_JmaxR_DS(on)max

650 V 0.42 Ω

I_D

STL13N60M2

7 A

• Extremely low gate charge

• Lower R_DS(on)x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

PowerFLAT™ 5x6 HV

• Zener-protected

Applications

• Switching applications

Figure 1. Internal schematic diagram

D(5, 6, 7, 8)

Description

This device is an N-channel Power MOSFET

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Q_g. This

revolutionary Power MOSFET associates a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

G(4)

Top View

S(1, 2, 3)

AM15540v2

Table 1. Device summary

Order code

STL13N60M2

Marking

13N60M2

Package

Packaging

PowerFLAT™ 5x6 HV

Tape and reel

June 2014

DocID026363 Rev 2

1/16

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...16

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