Datasheet > STL12N10F7

STL12N10F7

更新时间： 2024-11-28 14:58:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	582K
描述
N沟道100 V、11.3 mΩ典型值、12 A STripFET F7功率MOSFET，PowerFLAT 3.3x3.3封装

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技术参数
数据手册

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STL12N10F7 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.45
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

STL12N10F7 数据手册

STL12N10F7

Datasheet

N-channel 100 V, 11.3 mΩ typ., 12 A STripFET™ F7 Power MOSFET

in a PowerFLAT™ 3.3x3.3 package

Features

DS(on)

max.

Order code

STL12N10F7

100 V

13.3 mΩ

12 A

•

Among the lowest R_DS(on)on the market

Excellent FoM (figure of merit)

Low C_rss/C_issratio for EMI immunity

High avalanche ruggedness

Applications

D(5, 6, 7, 8)

•

Switching applications

Description

G(4)

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an

enhanced trench gate structure that results in very low on-state resistance, while also

reducing internal capacitance and gate charge for faster and more efficient switching.

S(1, 2, 3)

AM15810v1

Product status link

STL12N10F7

Product summary

Order code

STL12N10F7

12N10

Marking

Package

Packing

PowerFLAT™ 3.3x3.3

Tape and reel

DS12044 - Rev 2 - June 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...13

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