生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 雪崩能效等级(Eas): | 50 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 50 V | 最大漏极电流 (ID): | 16 A |
最大漏源导通电阻: | 0.09 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 150 pF | JESD-30 代码: | R-PSFM-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 50 W | 最大脉冲漏极电流 (IDM): | 64 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大开启时间(吨): | 95 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STK16N06 | STMICROELECTRONICS |
获取价格 |
16A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET | |
STK16N06(SOT-194) | STMICROELECTRONICS |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal | |
STK16N06{SOT-194} | STMICROELECTRONICS |
获取价格 |
16A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET | |
STK16N10L | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 16A I(D) | SOT-82 | |
STK1743 | ETC |
获取价格 |
NV TIME 8K X 8 AUTOSTORE NVSRAM WITH REAL - TIME CLOCK | |
STK1743-D25 | ETC |
获取价格 |
NV TIME 8K X 8 AUTOSTORE NVSRAM WITH REAL - TIME CLOCK | |
STK1743-D25I | ETC |
获取价格 |
NV TIME 8K X 8 AUTOSTORE NVSRAM WITH REAL - TIME CLOCK | |
STK1743-D35 | ETC |
获取价格 |
NV TIME 8K X 8 AUTOSTORE NVSRAM WITH REAL - TIME CLOCK | |
STK1743-D35I | ETC |
获取价格 |
NV TIME 8K X 8 AUTOSTORE NVSRAM WITH REAL - TIME CLOCK | |
STK1743-D45 | ETC |
获取价格 |
NV TIME 8K X 8 AUTOSTORE NVSRAM WITH REAL - TIME CLOCK |