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STK16CA8-W35I PDF预览

STK16CA8-W35I

更新时间: 2024-11-07 06:14:43
品牌 Logo 应用领域
SIMTEK 存储静态存储器
页数 文件大小 规格书
12页 311K
描述
128K x 8 AutoStorePlus™ nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM

STK16CA8-W35I 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:DIP,Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.92最长访问时间:35 ns
JESD-30 代码:R-PDIP-T32JESD-609代码:e0
长度:41.91 mm内存密度:1048576 bit
内存集成电路类型:NON-VOLATILE SRAM内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
认证状态:Not Qualified座面最大高度:4.83 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn85Pb15)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:15.24 mm
Base Number Matches:1

STK16CA8-W35I 数据手册

 浏览型号STK16CA8-W35I的Datasheet PDF文件第2页浏览型号STK16CA8-W35I的Datasheet PDF文件第3页浏览型号STK16CA8-W35I的Datasheet PDF文件第4页浏览型号STK16CA8-W35I的Datasheet PDF文件第5页浏览型号STK16CA8-W35I的Datasheet PDF文件第6页浏览型号STK16CA8-W35I的Datasheet PDF文件第7页 
STK16CA8  
128K x 8 AutoStorePlus™ nvSRAM  
QuantumTrap™ CMOS  
Nonvolatile Static RAM  
Preliminary  
FEATURES  
DESCRIPTION  
• 25ns, 35ns and 45ns Access Times  
The Simtek STK16CA8 is a fast static RAM with a  
nonvolatile element in each static memory cell. The  
embedded nonvolatile elements incorporate  
Simtek’s QuantumTrap™ technology producing the  
world’s most reliable nonvolatile memory. The SRAM  
provides unlimited read and write cycles, while inde-  
pendent, nonvolatile data resides in the nonvolatile  
elements. Data transfers from the SRAM to the non-  
volatile elements (the STORE operation) can take  
place automatically on power down or under soft-  
ware control. An internal capacitor guarantees the  
STORE operation, even under extreme power-down  
slew rates or loss of power from “hot swapping”.  
Transfers from the nonvolatile elements to the SRAM  
(the RECALL operation) take place automatically on  
restoration of power. Initiation of STORE and RECALL  
cycles can also be controlled by entering control  
sequences on the SRAM inputs. The STK16CA8 is  
pin-compatible with 128k x 8 SRAMs and battery-  
backed SRAMs, allowing direct substitution while  
providing superior performance.  
• Directly Replaces 128K x 8 Static RAM, Bat-  
tery-Backed RAM or EEPROM  
• Transparent Data Save on Power Down  
STORE to QuantumTrap™ Nonvolatile Ele-  
ments is Initiated by Software or AutoStore-  
Plus™on Power Down  
RECALL to SRAM Initiated by Software or  
Power Restore  
• 5mA Typical ICC at 200ns Cycle Time  
• Unlimited READ and WRITE Cycles to SRAM  
• 100-Year Data Retention to Quantum Trap  
• Single 3V +20%, -10% Operation  
• Commercial and Industrial Temperatures  
• 32-Pin DIP Package  
BLOCK DIAGRAM  
PIN CONFIGURATIONS  
VCC  
A15  
NC  
W
NC  
A16  
A14  
A12  
A7  
1
2
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
V
CC  
3
4
Quantum Trap  
1024 x 1024  
5
6
7
8
A13  
A8  
POWER  
A
A
A
A
A
A
A
A
A
A6  
5
6
7
8
CONTROL  
A5  
A9  
A4  
A11  
G
STORE  
9
A3  
A2  
10  
11  
12  
13  
14  
15  
16  
A10  
E
STORE/  
RECALL  
STATIC RAM  
9
A1  
RECALL  
ARRAY  
12  
13  
14  
15  
16  
A0  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
CONTROL  
1024 x 1024  
DQ0  
DQ1  
DQ2  
VSS  
A
SOFTWARE  
A
- A  
15  
0
PIN NAMES  
DETECT  
DQ  
DQ  
DQ  
0
1
2
3
4
COLUMN I/O  
A
- A  
Address Inputs  
Write Enable  
Data In/Out  
Chip Enable  
Output Enable  
Power (+ 3V)  
Ground  
0
16  
COLUMN DEC  
W
DQ  
DQ  
DQ - DQ  
0
7
DQ  
DQ  
DQ  
5
6
7
A
A
A
A
A
A A  
10 11  
0
1
2
3
4
E
G
G
E
W
V
V
CC  
SS  
September 2003  
1
Document Control # ML0023 rev 0.1  

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