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STK16C88-W25 PDF预览

STK16C88-W25

更新时间: 2024-09-18 20:26:27
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器静态存储器光电二极管内存集成电路
页数 文件大小 规格书
10页 299K
描述
32KX8 NON-VOLATILE SRAM, 25ns, PDIP28, 0.600 INCH, PLASTIC, DIP-28

STK16C88-W25 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:DIP
包装说明:DIP, DIP28,.6针数:28
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.26
Is Samacsys:N最长访问时间:25 ns
其他特性:STORE/RECALL TO EEPROM SOFTWARE OR AUTOSTOREPLUSJESD-30 代码:R-PDIP-T28
JESD-609代码:e0长度:36.83 mm
内存密度:262144 bit内存集成电路类型:NON-VOLATILE SRAM
内存宽度:8功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:32KX8封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP28,.6
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:5 V认证状态:Not Qualified
座面最大高度:4.57 mm最大待机电流:0.0015 A
子类别:SRAMs最大压摆率:0.097 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn85Pb15)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:15.24 mm
Base Number Matches:1

STK16C88-W25 数据手册

 浏览型号STK16C88-W25的Datasheet PDF文件第2页浏览型号STK16C88-W25的Datasheet PDF文件第3页浏览型号STK16C88-W25的Datasheet PDF文件第4页浏览型号STK16C88-W25的Datasheet PDF文件第5页浏览型号STK16C88-W25的Datasheet PDF文件第6页浏览型号STK16C88-W25的Datasheet PDF文件第7页 
STK16C88  
32K x 8 AutoStorePlus™ nvSRAM  
QuantumTrap™ CMOS  
Nonvolatile Static RAM  
DESCRIPTION  
FEATURES  
The STK16C88 is a fast SRAM with a nonvolatile  
element incorporated in each static memory cell.  
The SRAM can be read and written an unlimited  
number of times, while independent nonvolatile data  
resides in Nonvolatile Elements. Data transfers from  
the SRAM to the Nonvolatile Elements (the STORE  
operation) can take place automatically on power  
down. An internal capacitor guarantees the STORE  
operation regardless of power-down slew rate.  
Transfers from the Nonvolatile Elements to the  
SRAM (the RECALL operation) take place automati-  
cally on restoration of power. Initiation of STORE and  
RECALL cycles can also be controlled by entering  
control sequences on the SRAM inputs. The  
STK16C88 is pin-compatible with 32k x 8 SRAMs  
and battery-backed SRAMs, allowing direct substitu-  
tion while enhancing performance. The STK14C88,  
which uses an external capacitor, and the  
STK15C88, which uses charge stored in system  
capacitance, are alternatives for systems needing  
AutoStorePlus™ operation.  
• Transparent Data Save on Power Down  
• Internal Capacitor Guarantees AutoStore™  
Regardless of Power-Down Slew Rate  
• Directly Replaces 32K x 8 Static RAM, Battery-  
Backed RAM or EEPROM  
• 25ns, 35ns and 45ns Access Times  
STORE to Nonvolatile Elements Initiated by  
Software or AutoStorePlus™  
• No Data Loss from Undershoot  
RECALL to SRAM Initiated by Software or  
Power Restore  
• 10mA Typical ICC at 200ns Cycle Time  
• Unlimited READ, WRITE and RECALL Cycles  
• 1,000,000 STORE Cycles to Nonvolatile Ele-  
ments (Commercial/Industrial)  
• 100-Year Data Retention in nonvolatile ele-  
ments (Commercial/Industrial)  
• Single 5V + 10% Operation  
• 28-Pin PDIP Package  
BLOCK DIAGRAM  
PIN CONFIGURATIONS  
A14  
A12  
A7  
1
2
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
VCC  
W
QUANTUM TRAP  
V
512 x 512  
3
4
5
6
7
8
9
A13  
A8  
CC  
A6  
A5  
A5  
A9  
A6  
STORE  
A4  
A11  
G
A10  
E
STORE/  
RECALL  
A7  
POWER  
A3  
A8  
STATIC RAM  
ARRAY  
CONTROL  
A2  
CONTROL  
RECALL  
A9  
A1  
A0  
10  
11  
12  
13  
14  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
A11  
A12  
A13  
A14  
512 x 512  
DQ0  
DQ1  
DQ2  
VSS  
28 - 600 PDIP  
INTERNAL  
CAPACITOR  
DQ  
DQ  
DQ  
PIN NAMES  
0
1
2
COLUMN I/O  
SOFTWARE  
DETECT  
A
- A  
13  
0
A
- A  
Address Inputs  
0
14  
COLUMN DEC  
W
Write Enable  
Data In/Out  
Chip Enable  
Output Enable  
Power (+ 5V)  
Ground  
DQ  
3
4
DQ  
DQ - DQ  
0
7
DQ  
DQ  
DQ  
5
6
7
A
A A A  
A A  
1 4  
2 3  
10  
0
E
G
G
E
W
V
V
CC  
SS  
September 2003  
1
Document Control # ML0018 rev 0.1  

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