Datasheet > STK15C88-S45

STK15C88-S45

更新时间： 2024-11-09 20:16:39

品牌	Logo	应用领域
SIMTEK		可编程只读存储器电动程控只读存储器电可擦编程只读存储器静态存储器光电二极管内存集成电路
页数	文件大小	规格书
4页	32K
描述
Non-Volatile SRAM, 32KX8, 45ns, CMOS, PDSO28, 0.350 INCH, PLASTIC, SOIC-28

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中文翻译

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技术参数
数据手册
替代型号

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STK15C88-S45 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	SOP, SOP28,.5	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.32.00.41
风险等级：	5.77	最长访问时间：	45 ns
其他特性：	EEPROM SOFTWARE STORE; SOFTWARE RECALL; STORE CYCLE = 100000	JESD-30 代码：	R-PDSO-G28
JESD-609代码：	e0	长度：	18.085 mm
内存密度：	262144 bit	内存集成电路类型：	NON-VOLATILE SRAM
内存宽度：	8	湿度敏感等级：	3
功能数量：	1	端口数量：	1
端子数量：	28	字数：	32768 words
字数代码：	32000	工作模式：	ASYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	32KX8	输出特性：	3-STATE
可输出：	YES	封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP	封装等效代码：	SOP28,.5
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	240
电源：	5 V	认证状态：	Not Qualified
座面最大高度：	2.54 mm	最大待机电流：	0.003 A
子类别：	SRAMs	最大压摆率：	0.065 mA
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	Tin/Lead (Sn85Pb15)	端子形式：	GULL WING
端子节距：	1.27 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	30	宽度：	8.765 mm
Base Number Matches：	1

STK15C88-S45 数据手册

Applying the STK11C88, STK15C88

and STK16C88 32K x 8 nvSRAM

Abstract

SRAM Operations

Simtek Corporation’s family of high speed 256 kilobit

nonvolatile Static Random Access Memories

includes the STK15C88 AutoStore™ and

STK11C88 Software Store and STK16C88

AutoStorePlus™ devices. All three memories have

industry-standard 32K x 8 architectures and pin-outs

(Figure 1), and are drop-in replacements for many

standard SRAM and BatRAM products. As with all

Simtek nvSRAM products, the STK11C88,

STK15C88 and STK16C88 do not require batteries

or other power sources to maintain nonvolatility for a

guaranteed minimum of 100 years, even at high

temperatures.

The STK11C88, STK15C88 and STK16C88 nvS-

RAM memories are identical in the operation of their

RAM front ends, and look to the design engineer like

industry standard 32K x 8 fast SRAMs.

A₁₄

A₁₂

A₇

A₆

A₅

A₄

A₃

A₂

A₁

V_CC

A₁₃

A₈

A₉

A₁₁

A₁₀

A₀

DQ₇

DQ₆

DQ₅

DQ₄

DQ₃

The STK15C88 AutoStore™ and STK16C88

AutoStorePlus™ memories both automatically

STORE the SRAM data into EEPROM upon power

loss, and require no external power storage compo-

nents such as batteries or capacitors. They are

available in speeds of 20, 25, 35, and 45 nanosec-

onds.

DQ₀

DQ₁

DQ₂

V_SS

Figure 1

STK11C88/STK15C88/STK16C88 Pin-Out

The STK11C88 Software Store memory is designed

for safe storage of data under processor control.

The STK11C88 virtually eliminates the danger of

inadvertent data loss due to human error or elec-

tronics failure. It is ideally suited for applications that

would normally require the combination of high

speed SRAM and EEPROM, and performs both

functions in one package. The resultant savings in

board space, glue logic (parts count), and power

consumption helps to reduce costs and increase

packaging density. The STK11C88 is available in

20, 25, 35, and 45 nanosecond versions, and can

be interfaced to most standard microprocessors

without interface logic or memory wait states.

The three control lines, Write Enable (W), Chip

Enable (E), and Output Enable (G) are utilized in the

same manner as a standard SRAM. This front end

functional equivalency allows improvements to be

made to old designs without PWB (Printed Wiring

Board) or control logic changes. The ability of

Simtek's nvSRAM devices to run at processor bus

speeds eliminates the need for wait states, bus con-

trol logic, or specialized decoder circuitry. This com-

bination of speed and versatility in one package

serves to simplify board layout and reduce device

count.

SRAM Reads are performed whenever E and G are

low and W is high. The output data on lines DQ₀-

DQ₇corresponds to the address specified on pins

A₀- A₁₄.

Both memories automatically RECALL nonvolatile

data into the SRAM portion of the chip at power-up

without processor intervention or external control.

Simtek's family of nonvolatile memories give the

product development engineer the ability to design

modern embedded and state machines without the

worry of data loss or corruption due to power failure.

SRAM Writes are performed whenever E and W are

low. The data on pins DQ₀- DQ₇will be written into

memory at the location specified by the address

present on lines A₀- A₁₄. The G (Output Enable)

8-21

12 3 4

中文翻译

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STK15C88-S45 替代型号

型号	品牌	替代类型	描述	数据表
STK15C88-SF45ITR	CYPRESS	功能相似	256 Kbit (32K x 8) PowerStore nvSRAM
STK15C88-SF45TR	CYPRESS	功能相似	256 Kbit (32K x 8) PowerStore nvSRAM
STK15C88-SF45	SIMTEK	功能相似	32Kx8 PowerStore nvSRAM

与STK15C88-S45相关器件

型号	品牌	获取价格	描述	数据表
STK15C88-S45I	CYPRESS	获取价格	32KX8 NON-VOLATILE SRAM, 45ns, PDSO28, 0.350 INCH, PLASTIC, SOIC-28
STK15C88-SF25	CYPRESS	获取价格	256 Kbit (32K x 8) PowerStore nvSRAM
STK15C88-SF25	SIMTEK	获取价格	32Kx8 PowerStore nvSRAM
STK15C88-SF25I	SIMTEK	获取价格	32Kx8 PowerStore nvSRAM
STK15C88-SF25I	CYPRESS	获取价格	256 Kbit (32K x 8) PowerStore nvSRAM
STK15C88-SF25ITR	SIMTEK	获取价格	32Kx8 PowerStore nvSRAM
STK15C88-SF25ITR	CYPRESS	获取价格	256 Kbit (32K x 8) PowerStore nvSRAM
STK15C88-SF25TR	CYPRESS	获取价格	256 Kbit (32K x 8) PowerStore nvSRAM
STK15C88-SF25TR	SIMTEK	获取价格	32Kx8 PowerStore nvSRAM
STK15C88-SF35	CYPRESS	获取价格	32KX8 NON-VOLATILE SRAM, 35ns, PDSO28, 0.350 INCH, PLASTIC, SOIC-28

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