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STK15C88-3S55 PDF预览

STK15C88-3S55

更新时间: 2024-11-08 08:53:47
品牌 Logo 应用领域
SIMTEK 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
10页 291K
描述
32KX8 NON-VOLATILE SRAM, 55ns, PDSO28, 0.350 INCH, PLASTIC, SOIC-28

STK15C88-3S55 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SOP, SOP28,.45Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.81最长访问时间:55 ns
JESD-30 代码:R-PDSO-G28JESD-609代码:e0
长度:18.0848 mm内存密度:262144 bit
内存集成电路类型:NON-VOLATILE SRAM内存宽度:8
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP28,.45封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:3.3 V
认证状态:Not Qualified座面最大高度:2.54 mm
最大待机电流:0.0012 A子类别:SRAMs
最大压摆率:0.037 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn85Pb15)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:8.763 mmBase Number Matches:1

STK15C88-3S55 数据手册

 浏览型号STK15C88-3S55的Datasheet PDF文件第2页浏览型号STK15C88-3S55的Datasheet PDF文件第3页浏览型号STK15C88-3S55的Datasheet PDF文件第4页浏览型号STK15C88-3S55的Datasheet PDF文件第5页浏览型号STK15C88-3S55的Datasheet PDF文件第6页浏览型号STK15C88-3S55的Datasheet PDF文件第7页 
STK15C88-3  
32K x 8 AutoStore™ nvSRAM  
3.3V QuantumTrap™ CMOS  
Nonvolatile Static RAM  
FEATURES  
DESCRIPTION  
• Nonvolatile Storage without Battery Problems  
The STK15C88-3 is a fast SRAM with a nonvolatile  
EEPROM element incorporated in each static mem-  
ory cell. The SRAM can be read and written an  
unlimited number of times, while independent non-  
volatile data resides in EEPROM. Data transfers from  
the SRAM to the EEPROM (the STORE operation) can  
take place automatically on power down using  
charge stored in system capacitance. Transfers  
from the EEPROM to the SRAM (the RECALL opera-  
tion) take place automatically on restoration of  
power. Initiation of STORE and RECALL cycles can  
also be controlled by entering control sequences on  
the SRAM inputs. The STK15C88-3 is pin-compati-  
ble with 32k x 8 SRAMs and battery-backed SRAMs,  
allowing direct substitution while enhancing perfor-  
mance. A similar device (STK16C88-3) with an  
internally integrated capacitor is available for appli-  
cations with very fast power-down slew rates. The  
STK14C88-3, which uses an external capacitor, is  
another alternative for these applications.  
• Directly Replaces 32K x 8 Static RAM, Battery-  
Backed RAM or EEPROM  
• 35ns, 45ns and 55ns Access Times  
STORE to EEPROM Initiated by Software or  
AutoStore™ on Power Down  
RECALL to SRAM Initiated by Software or  
Power Restore  
• 8mA Typical ICC at 200ns Cycle Time  
• Unlimited READ, WRITE and RECALL Cycles  
• 1,000,000 STORE Cycles to EEPROM  
• 100-Year Data Retention over Full Industrial  
Temperature Range  
• 3.0V-3.6V Operation  
• Commercial and Industrial Temperatures  
• 28-Pin PDIP and SOIC Packages  
BLOCK DIAGRAM  
PIN CONFIGURATIONS  
A14  
A12  
A7  
1
2
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
VCC  
W
EEPROM ARRAY  
V
512 x 512  
3
4
5
6
7
8
9
A13  
A8  
CC  
A6  
A5  
A5  
A9  
A6  
STORE  
A4  
A11  
G
A10  
E
STORE/  
RECALL  
A7  
POWER  
A3  
A8  
STATIC RAM  
ARRAY  
CONTROL  
A2  
CONTROL  
RECALL  
A9  
A1  
A0  
10  
11  
12  
13  
14  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
A11  
A12  
A13  
A14  
512 x 512  
28 - 300 PDIP  
28 - 600 PDIP  
28 - 300 SOIC  
28 - 350 SOIC  
DQ0  
DQ1  
DQ2  
VSS  
SOFTWARE  
DETECT  
A
- A  
13  
0
DQ  
DQ  
DQ  
PIN NAMES  
0
1
2
COLUMN I/O  
A
- A  
Address Inputs  
0
14  
COLUMN DEC  
W
Write Enable  
Data In/Out  
Chip Enable  
Output Enable  
Power (+ 5V)  
Ground  
DQ  
3
4
DQ  
DQ - DQ  
0
7
DQ  
DQ  
DQ  
5
6
7
A
A A A  
A A  
1 4  
2 3  
10  
0
E
G
G
E
W
V
V
CC  
SS  
September 2002  
1

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