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STK14C88-5L35M PDF预览

STK14C88-5L35M

更新时间: 2024-11-10 06:14:43
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
17页 520K
描述
256 Kbit (32K x 8) AutoStore nvSRAM

STK14C88-5L35M 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:QFJ
包装说明:0.450 INCH, CERAMIC, LCC-32针数:32
Reach Compliance Code:compliantECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.68
Is Samacsys:N最长访问时间:35 ns
其他特性:EEPROM HARDWARE/SOFTWARE STORE; RETENTION/STORE CYCLE = 10 YEARS/100000JESD-30 代码:R-CQCC-N32
长度:13.97 mm内存密度:262144 bit
内存集成电路类型:NON-VOLATILE SRAM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:32字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:32KX8封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:QCCN封装等效代码:LCC32,.45X.55
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
筛选级别:MIL-STD-883座面最大高度:2.286 mm
最大待机电流:0.003 A子类别:SRAMs
最大压摆率:0.09 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:NO LEAD
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:11.43 mm
Base Number Matches:1

STK14C88-5L35M 数据手册

 浏览型号STK14C88-5L35M的Datasheet PDF文件第2页浏览型号STK14C88-5L35M的Datasheet PDF文件第3页浏览型号STK14C88-5L35M的Datasheet PDF文件第4页浏览型号STK14C88-5L35M的Datasheet PDF文件第5页浏览型号STK14C88-5L35M的Datasheet PDF文件第6页浏览型号STK14C88-5L35M的Datasheet PDF文件第7页 
STK14C88-5  
256 Kbit (32K x 8) AutoStore nvSRAM  
Features  
Functional Description  
35 ns and 45 ns access times  
The Cypress STK14C88-5 is a fast static RAM with a nonvolatile  
element in each memory cell. The embedded nonvolatile  
Hands off automatic STORE on power down with external 68  
µF capacitor  
elements incorporate QuantumTrap technology producing the  
world’s most reliable nonvolatile memory. The SRAM provides  
unlimited read and write cycles, while independent, nonvolatile  
data resides in the highly reliable QuantumTrap cell. Data  
transfers from the SRAM to the nonvolatile elements (the  
STORE operation) takes place automatically at power down. On  
power up, data is restored to the SRAM (the RECALL operation)  
from the nonvolatile memory. Both the STORE and RECALL  
operations are also available under software control. A hardware  
STORE is initiated with the HSB pin.  
STORE to QuantumTrap™ nonvolatile elements is initiated by  
software, hardware, or AutoStore™ on power down  
RECALL to SRAM initiated by software or power up  
Unlimited READ, WRITE, and RECALL cycles  
1,000,000 STORE cycles to QuantumTrap  
100 year data retention to QuantumTrap  
Single 5V+10% operation  
Military temperature  
32-pin (300 mil) CDIP and LCC (450 mil) packages  
Logic Block Diagram  
V
CC  
V
CAP  
Quantum Trap  
512 X 512  
POWER  
CONTROL  
A5  
STORE  
A6  
A7  
A8  
RECALL  
STORE/  
RECALL  
CONTROL  
STATIC RAM  
ARRAY  
512 X 512  
HSB  
A9  
A11  
A12  
A13  
A14  
SOFTWARE  
DETECT  
A13  
-A0  
DQ0  
COLUMN I/O  
DQ1  
DQ2  
DQ3  
COLUMN DEC  
DQ4  
DQ5  
A0  
A4  
A10  
A1  
A3  
A2  
DQ6  
DQ7  
OE  
CE  
WE  
Cypress Semiconductor Corporation  
Document Number: 001-51038 Rev. **  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised March 02, 2009  
[+] Feedback  

STK14C88-5L35M 替代型号

型号 品牌 替代类型 描述 数据表
STK14C88-NF35UTR CYPRESS

完全替代

暂无描述
STK14C88-NF35I CYPRESS

类似代替

32 K x 8 AutoStore nvSRAM Commercial, industrial, military temperatures
CY14E256L-SZ35XI CYPRESS

功能相似

256 Kbit (32K x 8) nvSRAM

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