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STI18N65M2 PDF预览

STI18N65M2

更新时间: 2024-11-27 14:57:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
15页 525K
描述
N沟道650 V、0.275 Ohm典型值、12 A MDmesh M2功率MOSFET,TO-220封装

STI18N65M2 技术参数

生命周期:ActiveReach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.52配置:Single
最大漏极电流 (Abs) (ID):12 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高工作温度:150 °C峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):110 W
子类别:FET General Purpose Power表面贴装:NO
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STI18N65M2 数据手册

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STI18N65M2, STP18N65M2  
N-channel 650 V, 0.275 typ., 12 A MDmesh™ M2  
Power MOSFET in I²PAK and TO-220 packages  
Datasheet  
-
production data  
Features  
Order code  
VDS  
RDS(on) max  
ID  
TAB  
TAB  
STI18N65M2  
STP18N65M2  
650V  
0.33  
12 A  
3
3
2
2
1
1
Extremely low gate charge  
2
I PAK  
TO-220  
Excellent output capacitance (Coss) profile  
100% avalanche tested  
Zener-protected  
Applications  
Figure 1. Internal schematic diagram  
, TAB  
Switching applications  
LLC converters, resonant converters  
Description  
These devices are N-channel Power MOSFETs  
developed using MDmesh™ M2 technology.  
Thanks to their strip layout and improved vertical  
structure, the devices exhibit low on-resistance  
and optimized switching characteristics, rendering  
them suitable for the most demanding high  
efficiency converters.  
AM15572v1  
Table 1. Device summary  
Order code  
Marking  
Package  
Packaging  
STI18N65M2  
STP18N65M2  
I2PAK  
18N65M2  
Tube  
TO-220  
January 2015  
DocID026870 Rev 2  
1/15  
This is information on a product in full production.  
www.st.com  

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