品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | / | |
页数 | 文件大小 | 规格书 |
15页 | 525K | |
描述 | ||
N沟道650 V、0.275 Ohm典型值、12 A MDmesh M2功率MOSFET,TO-220封装 |
生命周期: | Active | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 16 weeks |
风险等级: | 1.52 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 12 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高工作温度: | 150 °C | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 110 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
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N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP | |
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PAPIERTUCH 230X230MM 00 Inhalt pro Packung: 200 Stk. | |
STI2000 | ETC |
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TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | TO-92 | |
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TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 600MA I(C) | TO-92 | |
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TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | TO-92 | |
STI2003 | ETC |
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TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 600MA I(C) | TO-92 |