STGP12NB60HD

更新时间： 2024-02-22 21:25:10

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
9页	411K
描述
N-CHANNEL 12A - 600V TO-220 PowerMESH⑩ IGBT

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中文翻译

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STGP12NB60HD 数据手册

STGP12NB60HD

N-CHANNEL 12A - 600V TO-220

PowerMESH™ IGBT

TYPE

CES

CE(sat)

STGP12NB60HD

600 V

< 2.8 V

12 A

■ HIGH INPUT IMPEDANCE

■ LOW ON-VOLTAGE DROP (V

)

cesat

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

■ VERY HIGH FREQUENCY OPERATION

■ CO-PACKAGED WITH TURBOSWITCHT

■ ANTIPARALLEL DIODE

TO-220

DESCRIPTION

Using the latest high voltage technology based on a

patented strip layout, STMicroelectronics has de-

signed an advanced family of IGBTs, the Power-

MESH™ IGBTs, with outstanding perfomances.

INTERNAL SCHEMATIC DIAGRAM

The suffix "H" identifies a family optimized for high

frequency applications (up to 50kHz)in order to

achieve very high switching performances (reduced

tfall) mantaining a low voltage drop.

APPLICATIONS

■ HIGH FREQUENCY MOTOR CONTROLS

■ SMPS and PFC IN BOTH HARD SWITCH AND

RESONANT TOPOLOGIES

■ UPS

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

600

Unit

Collector-Emitter Voltage (V = 0)

CES

Emitter-Collector Voltage

Gate-Emitter Voltage

ECR

± 20

Collector Current (continuous) at T = 25°C

Collector Current (continuous) at T = 100°C

( )

Collector Current (pulsed)

TOT

Total Dissipation at T = 25°C

100

Derating Factor

0.8

W/°C

°C

stg

Storage Temperature

–65 to 150

150

Max. Operating Junction Temperature

( ) Pulse width limited by safe operating area

July 2003

1/9

12 3 4 5 6 7...9

中文翻译

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