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STGP12NB60H PDF预览

STGP12NB60H

更新时间: 2024-01-01 06:55:52
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 双极性晶体管
页数 文件大小 规格书
8页 89K
描述
N-CHANNEL 12A - 600V TO-220 PowerMESH IGBT

STGP12NB60H 数据手册

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STGP12NB60H  
N-CHANNEL 12A - 600V TO-220  
PowerMESH IGBT  
PRELIMINARY DATA  
TYPE  
VCES  
VCE(sat)  
< 2.8 V  
IC  
12 A  
STGP12NB60H  
600 V  
HIGH INPUT IMPEDANCE  
(VOLTAGEDRIVEN)  
LOW ON-VOLTAGEDROP (VCESAT)  
LOW GATE CHARGE  
HIGH CURRENT CAPABILITY  
VERY HIGH FREQUENCY OPERATION  
OFF LOSSES INCLUDE TAIL CURRENT  
3
2
1
DESCRIPTION  
Using the latest high voltage technology based  
on a patented strip layout, STMicroelectronics  
has designed an advanced family of IGBTs, the  
TO-220  
PowerMESH  
IGBTs,  
with  
outstanding  
perfomances. The suffix ”H” identifies a family  
optimized to achieve very low switching times for  
high frequency applications (<120kHz).  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH FREQUENCY MOTOR CONTROLS  
SMPS AND PFC IN BOTH HARD SWITCH  
AND RESONANT TOPOLOGIES  
UPS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VECR  
VGE  
IC  
Parameter  
Value  
600  
20  
Unit  
Collector-Emitter Voltage (VGS = 0)  
Emitter-Collector Voltage  
Gate-Emitter Voltage  
V
V
20  
V
±
o
Collector Current (continuous) at Tc = 25 C  
24  
A
o
IC  
Collector Current (continuous) at Tc = 100 C  
12  
96  
A
I
CM()  
Collector Current (pulsed)  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
100  
W
Derating Factor  
0.8  
W/oC  
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/8  
June 1999  

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