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STGD3NB60HD PDF预览

STGD3NB60HD

更新时间: 2024-11-26 04:01:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 双极性晶体管
页数 文件大小 规格书
10页 505K
描述
N-CHANNEL 6A - 600V - DPAK PowerMESH TM IGBT

STGD3NB60HD 数据手册

 浏览型号STGD3NB60HD的Datasheet PDF文件第2页浏览型号STGD3NB60HD的Datasheet PDF文件第3页浏览型号STGD3NB60HD的Datasheet PDF文件第4页浏览型号STGD3NB60HD的Datasheet PDF文件第5页浏览型号STGD3NB60HD的Datasheet PDF文件第6页浏览型号STGD3NB60HD的Datasheet PDF文件第7页 
STGD3NB60HD  
N-CHANNEL 6A - 600V - DPAK  
PowerMESH™ IGBT  
TYPE  
V
CES  
V
I
C
CE(sat) (Max)  
@25°C  
@100°C  
STGD3NB60HD  
600 V  
< 2.8 V  
6 A  
HIGH INPUT IMPEDANCE  
OFF LOSSES INCLUDE TAIL CURRENT  
LOW GATE CHARGE  
HIGH FREQUENCY OPERATION  
TYPICAL SHORT CIRCUIT WITHSTAND TIME  
5micro S-family, 4 micro H family  
CO-PACKAGED WITH TURBOSWITCH™  
ANTIPARALLEL DIODE  
3
1
DPAK  
INTERNAL SCHEMATIC DIAGRAM  
DESCRIPTION  
Using the latest high voltage technology based on a  
patented strip layout, STMicroelectronics has de-  
signed an advanced family of IGBTs, the Power-  
MESH™ IGBTs, with outstanding perfomances.  
The suffix "H" identifies a family optimized for high  
frequency applications (up to 50kHz)in order to  
achieve very high switching performances (reduced  
tfall) mantaining a low voltage drop.  
APPLICATIONS  
HIGH FREQUENCY MOTOR CONTROLS  
SMPS and PFC IN BOTH HARD SWITCH AND  
RESONANT TOPOLOGIES  
ORDERING INFORMATION  
SALES TYPE  
MARKING  
PACKAGE  
PACKAGING  
STGD3NB60HDT4  
GD3NB60HD  
DPAK  
TAPE & REEL  
September 2003  
1/10  

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