Datasheet > STGD18N40LZ

STGD18N40LZ

更新时间： 2024-11-26 03:12:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
18页	633K
描述
EAS 180 mJ - 400 V - internally clamped IGBT

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中文翻译

获取价格

数据手册

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STGD18N40LZ 数据手册

STGB18N40LZ

STGD18N40LZ

E_AS180 mJ - 400 V - internally clamped IGBT

Features

■ AEC Q101 compliant

■ 180 mJ of avalanche energy @ T = 150 °C,

L = 3 mH

DPAK

IPAK

■ ESD gate-emitter protection

■ Gate-collector high voltage clamping

■ Logic level gate drive

■ Low saturation voltage

■ High pulsed current capability

■ Gate and gate-emitter resistor

D²PAK

I²PAK

Application

■ Pencil coil electronic ignition driver

Figure 1.

Internal schematic diagram

Description

This IGBT utilizes the advanced PowerMESH™

process resulting in an excellent trade-off

between switching performance and low on-state

behavior.

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STGD18N40LZT4

STGD18N40LZ-1

STGB18N40LZT4

STGB18N40LZ-1

GD18N40LZ

GB18N40LZ

DPAK

IPAK

Tape and reel

Tube

D²PAK

I²PAK

Tape and reel

Tube

March 2008

Rev 2

1/18

www.st.com

12 3 4 5 6 7...18

中文翻译

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