Datasheet > STF7N65M2

STF7N65M2

更新时间： 2023-12-20 18:44:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	899K
描述
N沟道650 V、0.98 Ohm典型值、5 A MDmesh M2功率MOSFET，TO-220FP封装

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STF7N65M2 数据手册

STF7N65M2

N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2

Power MOSFET in a TO-220FP package

Datasheet

preliminary data

Features

R_DS(on)

max

Order code

V_DS

I_D

STF7N65M2

650 V

1.15 Ω

5 A

• Extremely low gate charge

• Excellent output capacitance (C_oss) profile

• 100% avalanche tested

TO-220FP

• Zener-protected

Applications

• Switching applications

Figure 1. Internal schematic diagram

Description

This device is an N-channel Power MOSFET

developed using the MDmesh™ M2 technology.

Thanks to the strip layout associated to an

improved vertical structure, the device exhibits

both low on-resistance and optimized switching

characteristics. It is therefore suitable for the most

demanding high efficiency converters.

AM15572v1

Table 1. Device summary

Order code

Marking

Package

TO-220FP

Packaging

STF7N65M2

7N65M2

Tube

August 2014

DocID026763 Rev 2

1/13

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

12 3 4 5 6 7...13

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