Datasheet > STF10N80K5

STF10N80K5

更新时间： 2024-09-28 14:57:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
17页	837K
描述
N沟道800 V、0.470 Ohm典型值、9 A MDmesh K5功率MOSFET，TO-220FP封装

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STF10N80K5 数据手册

STF10N80K5,

STFU10N80K5

N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power

MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

Datasheet - production data

Features

P_TOT

Order code

STF10N80K5

STFU10N80K5

V_DS

R_DS(on)max.

I_D

30 W

800 V

0.600 Ω

9 A



Industry’s lowest R_DS(on)x area

Industry’s best figure of merit (FoM)

Ultra-low gate charge

100% avalanche tested

Zener-protected

Applications

Figure 1: Internal schematic diagram



Switching applications

Description

These very high voltage N-channel Power

MOSFETs are designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

Table 1: Device summary

Package

Order code

STF10N80K5

STFU10N80K5

Marking

Packing

TO-220FP

10N80K5

Tube

TO-220FP ultra narrow leads

September 2016

DocID026564 Rev 5

1/17

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...17

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