Datasheet > STE110NS20FD_06

STE110NS20FD_06

更新时间： 2024-02-04 01:58:12

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	243K
描述
N-channel 200V - 0.022ヘ - 110A - ISOTOP MESH OVERLAY⑩ Power MOSFET

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STE110NS20FD_06 数据手册

STE110NS20FD

N-channel 200V - 0.022Ω - 110A - ISOTOP

MESH OVERLAY™ Power MOSFET

General features

Type

V_DSS

200V

R_DS(on)

I_D

STE110NS20FD

<0.024Ω 110A

■ Extremely high dv/dt capability

■ 100% avalanche tested

■ Gate charge minimized

■

20V gate to source voltage rating

ISOTOP

■ Low intrinsic capacitance

■ Fast body-drain diode:low trr, Qrr

Description

Internal schematic diagram

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an

advanced family of Power MOSFETs with

outstanding performances. The new patented

STrip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest R

per area, exceptional avalanche

DS(ON)

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

Applications

■ Switching application

Order codes

Part number

Marking

Package

Packaging

STE110NS20FD

E110NS20FD

ISOTOP

Tube

May 2006

Rev 3

1/12

www.st.com

12 3 4 5 6 7...12

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