Datasheet > STD7NB20T4

STD7NB20T4

更新时间： 2024-09-26 23:35:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
10页	166K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 7A I(D) \| TO-252AA

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STD7NB20T4 数据手册

STD7NB20

STD7NB20-1

- 7A DPAK/IPAK

N-CHANNEL 200V - 0.3

Ω

PowerMESH MOSFET

TYPE

DS(on)

DSS

STD7NB20

STD7NB20-1

200 V

< 0.40 Ω

7 A

■

TYPICAL R (on) = 0.3 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

ADD SUFFIX “T4” FOR ORDERING IN TAPE &

REEL

DPAK

IPAK

TO-252

TO-251

DESCRIPTION

Using the latest high voltage MESH OVERLAY

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprieraty edge termi-

INTERNAL SCHEMATIC DIAGRAM

nation structure, gives the lowest R

per area,

DS(on)

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

APPLICATIONS

■

SWITH MODE POWER SUPPLIES (SMPS)

DC-DC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

■

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-source Voltage (V = 0)

Value

Unit

200

Drain-gate Voltage (R = 20 kΩ)

200

DGR

Gate- source Voltage

± 30

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

( )

Drain Current (pulsed)

Total Dissipation at T = 25°C

TOT

Derating Factor

0.44

W/°C

V/ns

°C

dv/dt (1)

Peak Diode Recovery voltage slope

Storage Temperature

5.5

stg

– 65 to 150

Max. Operating Junction Temperature

150

(1) I ≤ 7A, di/dt≤200 A/µs, V ≤ V

, Tj≤T

(BR)DSS jMAX

(•)Pulse width limited by safe operating area

July 2002

1/10

12 3 4 5 6 7...10

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