Datasheet > STD7N65M2

STD7N65M2

更新时间： 2023-12-20 18:46:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
17页	1059K
描述
N沟道650 V、0.98 Ohm典型值、5 A MDmesh M2功率MOSFET，DPAK封装

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STD7N65M2 数据手册

STD7N65M2

N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2

Power MOSFET in a DPAK package

Datasheet

production data

Features

R_DS(on)

max

Order code

V_DS

I_D

TAB

STD7N65M2

650 V

1.15 Ω

5 A

• Extremely low gate charge

• Excellent output capacitance (C_oss) profile

• 100% avalanche tested

DPAK

• Zener-protected

Applications

• Switching applications

Figure 1. Internal schematic diagram

D(2, TAB)

Description

This device is an N-channel Power MOSFET

developed using the MDmesh™ M2 technology.

Thanks to the strip layout associated to an

improved vertical structure, the device exhibits

both low on-resistance and optimized switching

characteristics. It is therefore suitable for the most

demanding high efficiency converters.

G(1)

S(3)

AM15572v1

Table 1. Device summary

Order code

Marking

Package

DPAK

Packaging

STD7N65M2

7N65M2

Tape and reel

May 2015

DocID026787 Rev 2

1/17

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...17

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